Goford Semiconductor G66
MPNG66
Active
P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
$0.49Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
RoHSROHS3 Compliant
SeriesG
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | G |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 16 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 5.8A (Ta) |
| Power dissipation | 1.7W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 45mOhm @ 4.1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 7.8 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 740 pF @ 4 V |