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Goford Semiconductor G66 — Logic ICs

Goford Semiconductor G66

MPNG66
Active

P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT

$0.49Ref. price · indicative, final on quote
Packaging6-WDFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

G66 Technical Specifications
ParameterValue
SeriesG
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage16 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C5.8A (Ta)
Power dissipation1.7W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-WDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 4.1A, 4.5V
Gate charge (Qg) (Max) @ vgs7.8 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds740 pF @ 4 V