Goford Semiconductor G58N06K — DC-DC Power Modules
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Goford Semiconductor / DC-DC Power Modules

Goford Semiconductor G58N06K

MPN G58N06K
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

N60V,58A,RD<13M@10V,VTH1.0V~2.5V

In Stock: 2,390 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.64 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.64
10+ pcs
$0.58
30+ pcs
$0.52
100+ pcs
$0.47
500+ pcs
$0.44
1,000+ pcs
$0.42
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$0.64 / ea

2,390 in stock — maximum per order · 3–4 days lead time

$0.58 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (17)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Output / Current 60 V

Full Technical Specifications

17 Parameters
G58N06K specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C58A (Tc)
Power dissipation71W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs13mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2841 pF @ 30 V
Series Sibling Variants

Goford Semiconductor TrenchFET® Series Models

Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

G58N06K
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