Goford Semiconductor G35N02K
MPNG35N02K
Active
N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
$0.47Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 13mOhm @ 20A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 24 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1380 pF @ 10 V |