Goford Semiconductor G33N03D52
MPNG33N03D52
Active
N30V, 33A,RD<13M@10V,VTH1V~3V, D
$0.68Ref. price · indicative, final on quote
PackagingDFN5*6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 29W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | DFN5*6 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 13mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 782 pF @ 15 V |