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Goford Semiconductor G2K3N10L6 — Logic ICs

Goford Semiconductor G2K3N10L6

MPNG2K3N10L6
Active

N100V, 3A,RD<220M@10V,VTH1.0V~2.

$0.37Ref. price · indicative, final on quote
PackagingSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

G2K3N10L6 Technical Specifications
ParameterValue
SeriesG
FET type2 N-Channel (Dual)
Mounting typeSurface Mount
Drain to source voltage100V
Current - continuous drain (Id) @ 25°C3A (Tc)
Power - max1.67W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CaseSOT-23-6
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs220mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs4.8nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds536pF @ 50V