G2K3N10L6
Goford Semiconductor G2K3N10L6
MPNG2K3N10L6
Active
N100V, 3A,RD<220M@10V,VTH1.0V~2.
$0.37Ref. price · indicative, final on quote
PackagingSOT-23-6
RoHSROHS3 Compliant
SeriesG
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | G |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 100V |
| Current - continuous drain (Id) @ 25°C | 3A (Tc) |
| Power - max | 1.67W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | SOT-23-6 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 220mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.8nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 536pF @ 50V |