Goford Semiconductor G2312
MPNG2312
Active
N20V,RD(MAX)<18M@10V,RD(MAX)<20M
$0.45Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Current - continuous drain (Id) @ 25°C | 5A |
| Power dissipation | 1.25W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 18mOhm @ 4.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 11 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 780 pF @ 10 V |