Goford Semiconductor G20N06D52
MPNG20N06D52
Active
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
$0.71Ref. price · indicative, final on quote
Packaging8-PowerTDFN
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 20A (Ta) |
| Power - max | 45W (Ta) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 30mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 1220pF @ 30V |