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G200P04S2
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Goford Semiconductor / Logic ICs

Goford Semiconductor G200P04S2

MPN G200P04S2
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

P-40V,-9A,RD(MAX)<20M@-10V,VTH-1

In Stock: 4,000 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.95 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.95
10+ pcs
$0.86
30+ pcs
$0.78
100+ pcs
$0.70
500+ pcs
$0.66
1,000+ pcs
$0.62
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$0.95 / ea

4,000 in stock — maximum per order · 3–4 days lead time

$0.86 / ea from 10 pcs
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100% Original Sealed 45x Microscope QC 30-Day Warranty · COC USD T/T & PI · DAP/DDP
[SPEC] Essential Parameters Snapshot Full Specifications (14)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Output / Current 40V

Full Technical Specifications

14 Parameters
G200P04S2 specifications
Parameter / AttributeSpecification / Value
SeriesG
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power - max2.1W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs42nC @ 10V
Input capacitance (Ciss) (Max) @ vds2365pF @ 20V
Series Sibling Variants

Goford Semiconductor G Series Models

Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

G08N06S
N60V, RD(MAX)<30M@10V,RD(MAX)<40
View Availability & Specs
G11S
P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
View Availability & Specs
G13P04S
P-40V,-13A,RD(MAX)<15M@-10V,VTH-
View Availability & Specs
G18P03S
P-30V,-15A,RD(MAX)<10M@-10V,VTH-
View Availability & Specs
G2002A
N200V, 2A,RD<540M@10V,VTH1.0V~3.
View Availability & Specs
G2003A
N190V, 3A,RD<540M@10V,VTH1.0V~3.
View Availability & Specs
G200P04S2
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