G200P04S2
Goford Semiconductor G200P04S2
MPNG200P04S2
Active
P-40V,-9A,RD(MAX)<20M@-10V,VTH-1
$0.95Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
SeriesG
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | G |
| FET type | 2 P-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 40V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power - max | 2.1W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 42nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 2365pF @ 20V |