G2002A
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Goford Semiconductor G2002A
MPN G2002A
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
N200V, 2A,RD<540M@10V,VTH1.0V~3.
In Stock: 3,000 pcs
MOQ: 5 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.40 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.40
10+ pcs
$0.36
30+ pcs
$0.33
100+ pcs
$0.30
500+ pcs
$0.28
1,000+ pcs
$0.26
Working on a production BOM or have a target unit price? Submit Target Price
[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case SOT-23-6
Output / Current 200 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | G |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 2A (Tc) |
| Power dissipation | 2.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 540mOhm @ 1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 733 pF @ 100 V |
Series Sibling Variants
Goford Semiconductor G Series Models
Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
G08N06S
N60V, RD(MAX)<30M@10V,RD(MAX)<40
View Availability & Specs
G11S
P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
View Availability & Specs
G13P04S
P-40V,-13A,RD(MAX)<15M@-10V,VTH-
View Availability & Specs
G18P03S
P-30V,-15A,RD(MAX)<10M@-10V,VTH-
View Availability & Specs
G2003A
N190V, 3A,RD<540M@10V,VTH1.0V~3.
View Availability & Specs
G200P04S2
P-40V,-9A,RD(MAX)<20M@-10V,VTH-1
View Availability & Specs
G2002A
Verified Allocation