Goford Semiconductor G180N06S2
MPNG180N06S2
Active
MOSFET 2N-CH 60V 8A 8SOP
$0.8Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power - max | 2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.4V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 58nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 2330pF @ 30V |