G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
[IN STOCK] In Stock: 2 pcs
MOQ 2 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
RFQ — this part
First response typically within one business day; complex BOMs may take longer.
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 42W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 110mOhm @ 8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
Related Models & Series Alternatives
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G15N10C
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