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Goford Semiconductor G130N06S2

Goford Semiconductor G130N06S2

MPNG130N06S2
Active

MOSFET 2N-CH 60V 9A 8SOP

$0.92Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSRoHS Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

G130N06S2 specifications
ParameterValue
SeriesTrenchFET®
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power - max2.6W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureStandard
Configuration2 N-Channel
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs67nC @ 10V
Input capacitance (Ciss) (Max) @ vds3021pF @ 30V