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Goford Semiconductor G130N06S2
MPN G130N06S2
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
MOSFET 2N-CH 60V 9A 8SOP
In Stock: 3,750 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.92 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.92
10+ pcs
$0.83
30+ pcs
$0.75
100+ pcs
$0.68
500+ pcs
$0.63
1,000+ pcs
$0.60
Working on a production BOM or have a target unit price? Submit Target Price
[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Output / Current 60V
Full Technical Specifications
15 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power - max | 2.6W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Configuration | 2 N-Channel |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 15mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 67nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 3021pF @ 30V |
Series Sibling Variants
Goford Semiconductor TrenchFET® Series Models
Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
03N06L
N60V,RD(MAX)<100M@10V,RD(MAX)<12
View Availability & Specs
18N10
N100V,RD(MAX)<53M@10V,RD(MAX)<63
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3400L
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
View Availability & Specs
630A
N200V,RD(MAX)<280M@10V,VTH1V~3V,
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G01N20LE
N200V,RD(MAX)<850M@10V,RD(MAX)<9
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G04P10HE
P-100V,-4A,RD(MAX)<200M@-10V,VTH
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G130N06S2
Verified Allocation