Goford Semiconductor G11S — Logic ICs
Technical Documents PDF / CAD
RoHS Compliant · Lead-Free EIA-481 Standard

Goford Semiconductor G11S

MPN G11S
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX

In Stock: 3,890 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.43 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.43
10+ pcs
$0.39
30+ pcs
$0.35
100+ pcs
$0.32
500+ pcs
$0.30
1,000+ pcs
$0.28
Working on a production BOM or have a target unit price? Submit Target Price
Buy Now

$0.43 / ea

3,890 in stock — maximum per order · 3–4 days lead time

$0.39 / ea from 10 pcs

Upload Full BOM List
[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Output / Current 20 V

Full Technical Specifications

16 Parameters
G11S specifications
Parameter / AttributeSpecification / Value
SeriesG
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation3.3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1.1V @ 250µA
Rds on (Max) @ id, vgs18.4mOhm @ 1A, 4.5V
Gate charge (Qg) (Max) @ vgs47 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2455 pF @ 10 V
Series Sibling Variants

Goford Semiconductor G Series Models

Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

G11S
Verified Allocation
Quote