Goford Semiconductor G10P03
MPNG10P03
Active
P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3
$0.51Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 10A |
| Power dissipation | 20W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1550 pF @ 15 V |