Goford Semiconductor G1006LE
MPNG1006LE
Active
N100V,RD(MAX)<150M@10V,RD(MAX)<1
$0.49Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 3A (Tc) |
| Power dissipation | 1.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 622 pF @ 50 V |