Goford Semiconductor G08N06S — Logic ICs
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G08N06S - Goford Semiconductor

MPN G08N06S
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

N60V, RD(MAX)<30M@10V,RD(MAX)<40

In Stock: 7 pcs
MOQ: 5 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.21 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
5+ pcs
$0.21
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$0.21 / ea · total $1.05

7 in stock — maximum per order · MOQ 5 · 3–4 days lead time

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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Output / Current 60 V

Full Technical Specifications

16 Parameters
G08N06S specifications
Parameter / AttributeSpecification / Value
SeriesG
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds979 pF @ 30 V
Series Sibling Variants

Goford Semiconductor G Series Models

Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

G08N06S
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