Goford Semiconductor G06N10
MPNG06N10
Active
N100V,RD(MAX)<240M@10V,VTH1.2V~3
$0.48Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Current - continuous drain (Id) @ 25°C | 6A |
| Power dissipation | 25W |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 240mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.2 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 190 pF @ 50 V |