Goford Semiconductor 630A
MPN630A
Active
N200V,RD(MAX)<280M@10V,VTH1V~3V,
$0.83Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSRoHS non-compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 83W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 4.5A, 10V |