Goford Semiconductor 5N20A
MPN5N20A
Active
N200V,RD(MAX)<650M@10V,VTH1V~3V,
$0.67Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Current - continuous drain (Id) @ 25°C | 5A |
| Power dissipation | 78W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 650mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 255 pF @ 25 V |