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Goford Semiconductor 18N20 — Logic ICs

Goford Semiconductor 18N20

MPN18N20
Active

N 200V, RD(MAX)<0.16@10V,VTH1.0V

$0.9Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

18N20 Technical Specifications
ParameterValue
Series18N20
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tj)
Power dissipation65.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs17.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds836 pF @ 25 V