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GeneSiC Semiconductor GE10MPS06E

GeneSiC Semiconductor GE10MPS06E

MPNGE10MPS06E
Active

DIODE SIL CARB 650V 26A TO252-2

$2.77Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSRoHS Compliant
SeriesSiC Schottky MPS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GE10MPS06E specifications
ParameterValue
SeriesSiC Schottky MPS™
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Current - average rectified26A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Capacitance @ vr,466pF @ 1V, 1MHz