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GeneSiC Semiconductor GE10MPS06A

GeneSiC Semiconductor GE10MPS06A

MPNGE10MPS06A
Active

DIODE SIL CARB 650V 19A TO220-2

$3.06Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSRoHS Compliant
SeriesSiC Schottky MPS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GE10MPS06A specifications
ParameterValue
SeriesSiC Schottky MPS™
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Current - average rectified19A
Operating temperature - junction-55°C ~ 175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr,466pF @ 1V, 1MHz