GeneSiC Semiconductor GE04MPS06E
MPNGE04MPS06E
Active
DIODE SIL CARB 650V 11A TO252-2
$1.75Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesSiC Schottky MPS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SiC Schottky MPS™ |
| Diode type | Silicon Carbide Schottky |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 650 V |
| Voltage - forward (Vf) (Max) @ if | 1.35 V @ 4 A |
| Current - reverse leakage @ vr | 5 µA @ 650 V |
| Current - average rectified | 11A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Capacitance @ vr, | 186pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |