GeneSiC Semiconductor GD10MPS12A
MPNGD10MPS12A
Active
DIODE SIL CARB 1.2KV 25A TO220-2
$3.89Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
SeriesSiC Schottky MPS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SiC Schottky MPS™ |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 10 A |
| Current - reverse leakage @ vr | 5 µA @ 1200 V |
| Current - average rectified | 25A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | TO-220-2 |
| Capacitance @ vr, | 367pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |