GeneSiC Semiconductor GD02MPS12E
MPNGD02MPS12E
Active
DIODE SIL CARB 1.2KV 8A TO252-2
$1.45Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesSiC Schottky MPS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SiC Schottky MPS™ |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 1200 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 2 A |
| Current - reverse leakage @ vr | 5 µA @ 1200 V |
| Current - average rectified | 8A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Capacitance @ vr, | 73pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |