GeneSiC Semiconductor GB02SHT01-46
MPNGB02SHT01-46
Active
DIODE SIL CARBIDE 100V 4A TO46
$46.41Ref. price · indicative, final on quote
PackagingTO-206AB, TO-46-3 Metal Can
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Silicon Carbide Schottky |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 100 V |
| Voltage - forward (Vf) (Max) @ if | 1.6 V @ 1 A |
| Current - reverse leakage @ vr | 5 µA @ 100 V |
| Current - average rectified | 4A |
| Operating temperature - junction | -55°C ~ 210°C |
| Speed | No Recovery Time > 500mA (Io) |
| Package | Bulk |
| Case | TO-206AB, TO-46-3 Metal Can |
| Capacitance @ vr, | 76pF @ 1V, 1MHz |
| Reverse recovery time | 0 ns |