GeneSiC Semiconductor G3R450MT17D
MPNG3R450MT17D
Active
SIC MOSFET N-CH 9A TO247-3
$7.57Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSRoHS Compliant
SeriesG3R™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | G3R™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1700 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 88W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±15V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 2.7V @ 2mA |
| Rds on (Max) @ id, vgs | 585mOhm @ 4A, 15V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 454 pF @ 1000 V |