GeneSiC Semiconductor G3R350MT12J
MPNG3R350MT12J
Active
SIC MOSFET N-CH 11A TO263-7
$5.79Ref. price · indicative, final on quote
PackagingTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
RoHSRoHS Compliant
SeriesG3R™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | G3R™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 75W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±15V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Vgs(th) (Max) @ id | 2.69V @ 2mA |
| Rds on (Max) @ id, vgs | 420mOhm @ 4A, 15V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 334 pF @ 800 V |