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GeneSiC Semiconductor 1N3881

GeneSiC Semiconductor 1N3881

MPN1N3881
Active

DIODE GEN PURP 200V 6A DO4

$7.13Ref. price · indicative, final on quote
PackagingDO-203AA, DO-4, Stud
RoHSRoHS Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N3881 specifications
ParameterValue
Diode typeStandard
MountingChassis, Stud Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 6 A
Current - reverse leakage @ vr15 µA @ 50 V
Current - average rectified6A
Operating temperature - junction-65°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseDO-203AA, DO-4, Stud
Reverse recovery time200 ns