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GeneSiC Semiconductor 1N3768R

GeneSiC Semiconductor 1N3768R

MPN1N3768R
Active

DIODE GEN PURP REV 1KV 35A DO5

$10.12Ref. price · indicative, final on quote
PackagingDO-203AB, DO-5, Stud
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N3768R specifications
ParameterValue
Diode typeStandard, Reverse Polarity
MountingChassis, Stud Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 35 A
Current - reverse leakage @ vr10 µA @ 50 V
Current - average rectified35A
Operating temperature - junction-65°C ~ 190°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-203AB, DO-5, Stud