GeneSiC Semiconductor 1N1200A
MPN1N1200A
Active
DIODE GEN PURP 100V 12A DO4
$6.33Ref. price · indicative, final on quote
PackagingDO-203AA, DO-4, Stud
RoHSRoHS Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Chassis, Stud Mount |
| Voltage - DC reverse (Vr) | 100 V |
| Voltage - forward (Vf) (Max) @ if | 1.1 V @ 12 A |
| Current - reverse leakage @ vr | 10 µA @ 50 V |
| Current - average rectified | 12A |
| Operating temperature - junction | -65°C ~ 200°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Bulk |
| Case | DO-203AA, DO-4, Stud |