Fairchild Semiconductor FQB7N80TM
MPNFQB7N80TM
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | QFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.6A (Tc) |
| Power dissipation | 3.13W (Ta), 167W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 1.5Ohm @ 3.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 52 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1850 pF @ 25 V |