Skip to main content
Fairchild Semiconductor FQB46N15TM — Discrete Semiconductors

Fairchild Semiconductor FQB46N15TM

MPNFQB46N15TM
Active

N-CHANNEL POWER MOSFET

$1.5300Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSNot applicable
SeriesQFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FQB46N15TM specifications
ParameterValue
SeriesQFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C45.6A (Tc)
Power dissipation3.75W (Ta), 210W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs42mOhm @ 22.8A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3250 pF @ 25 V