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Fairchild Semiconductor FQB85N06TM
MPN FQB85N06TM
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
N-CHANNEL POWER MOSFET
In Stock: 23,961 pcs
MOQ: 1 pcs
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Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$1.31 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$1.31
10+ pcs
$1.18
30+ pcs
$1.07
100+ pcs
$0.97
500+ pcs
$0.90
1,000+ pcs
$0.85
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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output / Current 60 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | QFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 85A (Tc) |
| Power dissipation | 3.75W (Ta), 160W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Bulk |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 10mOhm @ 42.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 112 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4120 pF @ 25 V |
Series Sibling Variants
Fairchild Semiconductor QFET® Series Models
Sibling variants, package options, and speed/density grades in this Fairchild Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
FQB85N06TM
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