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EPC — Discrete Semiconductors

EPC Discrete Semiconductors — 4 part numbers with specifications and datasheets. Filter by key specs and request a quote on ICBOMS.

Current - Continuous Drain (Id) @ 25°C
1.7A (Ta) · 9.5A, 38A · 90A (Ta) · 3.4A (Ta)
Drain to Source Voltage (Vdss)
100 V · 60V · 80 V · 15 V
Gate Charge (Qg) (Max) @ Vgs
0.12 nC @ 5 V · 2.7nC @ 5V, 12nC @ 5V · 19 nC @ 5 V · 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
14 pF @ 50 V · 300pF @ 30V, 1200pF @ 30V · 1940 pF @ 40 V · 118 pF @ 7.5 V
Rds On (Max) @ Id, Vgs
550mOhm @ 100mA, 5V · 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V · 2.2mOhm @ 29A, 5V · 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 80µA · 2.5V @ 3mA, 2.5V @ 12mA · 2.5V @ 13mA · 2.5V @ 1mA
FET Feature
GaNFET (Gallium Nitride) · Standard
FET Type
N-Channel · 2 N-Channel (Half Bridge)