How many Diodes Incorporated Diodes Incorporated DMN4 Series part numbers are listed?

4 Diodes Incorporated Diodes Incorporated DMN4 Series part numbers are listed, each with specifications and a datasheet where available.

Diodes Incorporated DMN4 Series

4 variants · Diodes Incorporated

About the Diodes Incorporated Diodes Incorporated DMN4 Series series

The Diodes Incorporated Diodes Incorporated DMN4 Series series groups 4 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of 8-SOIC (0.154\", 3.90mm Width), drain to source voltage of 30 V and drive voltage (Max rds on, min rds on) of 4.5V, 10V. Variants differ by current - continuous drain (Id) @ 25°C, gate charge (Qg) (Max) @ vgs and input capacitance (Ciss) (Max) @ vds, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. All listed Diodes Incorporated DMN4 Series part numbers are active and orderable.

Select a variant by

Current - continuous drain (Id) @ 25°C: 8A (Ta) · 8.6A (Ta) · 9A (Ta) · 10A (Ta)
Gate charge (Qg) (Max) @ vgs: 8.7 nC @ 5 V · 9.47 nC @ 5 V · 18.85 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds: 798 pF @ 10 V · 867 pF @ 10 V
Power dissipation: 1.46W (Ta) · 1.52W (Ta)
Rds on (Max) @ id, vgs: 14mOhm @ 8A, 10V · 14mOhm @ 9A, 10V · 14mOhm @ 11.6A, 10V · 16mOhm @ 9A, 10V
Vgs: ±20V · ±25V
Vgs(th) (Max) @ id: 1.6V @ 250µA · 1.95V @ 250µA

Variant comparison

Parameter	DMN4468LSS-13	DMN4800LSS-13	DMN4800LSSL-13	DMN4800LSSQ-13
Current - continuous drain (Id) @ 25°C	10A (Ta)	9A (Ta)	8A (Ta)	8.6A (Ta)
Gate charge (Qg) (Max) @ vgs	18.85 nC @ 10 V	9.47 nC @ 5 V	8.7 nC @ 5 V	8.7 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds	867 pF @ 10 V	798 pF @ 10 V	798 pF @ 10 V	798 pF @ 10 V
Power dissipation	1.52W (Ta)	1.46W (Ta)	1.46W (Ta)	1.46W (Ta)
Rds on (Max) @ id, vgs	14mOhm @ 11.6A, 10V	16mOhm @ 9A, 10V	14mOhm @ 8A, 10V	14mOhm @ 9A, 10V
Vgs	±20V	±25V	±20V	±25V
Vgs(th) (Max) @ id	1.95V @ 250µA	1.6V @ 250µA	1.6V @ 250µA	1.6V @ 250µA

Shared specifications

Case: 8-SOIC (0.154\", 3.90mm Width)
Drain to source voltage: 30 V
Drive voltage (Max rds on, min rds on): 4.5V, 10V
FET feature: -
FET type: N-Channel
Mounting type: Surface Mount
Operating temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR) Cut Tape (CT)
Technology: MOSFET (Metal Oxide)

Request a quote on any Diodes Incorporated DMN4 Series part number and we confirm price, availability and lead time per line — including end-of-life and allocation-constrained variants.

Frequently asked questions

How do the Diodes Incorporated Diodes Incorporated DMN4 Series variants differ?: Diodes Incorporated DMN4 Series part numbers differ by current - continuous drain (Id) @ 25°C, gate charge (Qg) (Max) @ vgs, input capacitance (Ciss) (Max) @ vds and power dissipation. Use the selection guide above to pick by current - continuous drain (Id) @ 25°C.
How many Diodes Incorporated Diodes Incorporated DMN4 Series part numbers are listed?: 4 Diodes Incorporated Diodes Incorporated DMN4 Series part numbers are listed, each with specifications and a datasheet where available.
How do I get pricing and lead time for Diodes Incorporated Diodes Incorporated DMN4 Series?: Request a quote (RFQ) for any Diodes Incorporated DMN4 Series part number and we confirm price, availability and lead time per line — including end-of-life and hard-to-find variants.