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Diodes Incorporated ZVP2110GTA — Discrete Semiconductors

Diodes Incorporated ZVP2110GTA

MPNZVP2110GTA
Active

MOSFET P-CH 100V 310MA SOT223

$1.0500Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ZVP2110GTA specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C310mA (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3.5V @ 1mA
Rds on (Max) @ id, vgs8Ohm @ 375mA, 10V
Input capacitance (Ciss) (Max) @ vds100 pF @ 25 V