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Diodes Incorporated DMPH33M8SPSW-13 — Discrete Semiconductors

Diodes Incorporated DMPH33M8SPSW-13

MPNDMPH33M8SPSW-13
Active
$0.8038Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMPH33M8SPSW-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation1.7W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs3.8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs127 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3775 pF @ 15 V