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Diodes Incorporated DMPH3010LPS-13 — Discrete Semiconductors

Diodes Incorporated DMPH3010LPS-13

MPNDMPH3010LPS-13
Active
$0.4126Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMPH3010LPS-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation2.6W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.1V @ 250µA
Rds on (Max) @ id, vgs7.5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs139 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6807 pF @ 15 V