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Diodes Incorporated DMPH16M1UPSW-13 — Discrete Semiconductors

Diodes Incorporated DMPH16M1UPSW-13

MPNDMPH16M1UPSW-13
End of Life
$0.2979Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMPH16M1UPSW-13 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C96A (Tc)
Power dissipation1.95W
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 15A, 4.5V
Gate charge (Qg) (Max) @ vgs164 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds5392 pF @ 10 V