DMPH1006UPSQ-13

Diodes Incorporated

MOSFET P-CH 12V 80A PWRDI5060-8

Diodes Incorporated DMPH1006UPSQ-13
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

DMPH1006UPSQ-13 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101
FET typeP-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation3.2W
Operating temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs6mOhm @ 15A, 4.5V
Gate charge (Qg) (Max) @ vgs124 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds6334 pF @ 10 V
DMPH1006UPSQ-13
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