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Diodes Incorporated DMP65H9D0HSS-13 — Discrete Semiconductors

Diodes Incorporated DMP65H9D0HSS-13

MPNDMP65H9D0HSS-13
Active
$0.6006Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP65H9D0HSS-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation1.25W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs9Ohm @ 300mA, 10V
Gate charge (Qg) (Max) @ vgs17 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds740 pF @ 25 V