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Diodes Incorporated DMP32D4S-13 — Discrete Semiconductors

Diodes Incorporated DMP32D4S-13

MPNDMP32D4S-13
Active

MOSFET P-CH 30V 300MA SOT23

$0.4000Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP32D4S-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C300mA (Ta)
Power dissipation370mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs2.4Ohm @ 300mA, 10V
Gate charge (Qg) (Max) @ vgs0.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds51.16 pF @ 15 V