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Diodes Incorporated DMP3050LVTQ-7 — Discrete Semiconductors

Diodes Incorporated DMP3050LVTQ-7

MPNDMP3050LVTQ-7
Active

MOSFET BVDSS: 25V~30V TSOT26 T&R

$0.4400Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP3050LVTQ-7 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C4.5A (Ta)
Power dissipation1.6W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageBulk
Vgs±25V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs50mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs10.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds620 pF @ 15 V