Skip to main content
Diodes Incorporated DMP3017SFGQ-13 — Discrete Semiconductors

Diodes Incorporated DMP3017SFGQ-13

MPNDMP3017SFGQ-13
Obsolete
$0.8000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP3017SFGQ-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C11.5A (Ta)
Power dissipation940mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-PowerVDFN
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 11.5A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2246 pF @ 15 V