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Diodes Incorporated DMP27M1UPSW-13 — Discrete Semiconductors

Diodes Incorporated DMP27M1UPSW-13

MPNDMP27M1UPSW-13
Active
$0.3247Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP27M1UPSW-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount, Wettable Flank
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C84A (Tc)
Power dissipation1.95W (Ta), 3.57W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs123 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4777 pF @ 10 V