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Diodes Incorporated DMP2123LQ-13 — Discrete Semiconductors

Diodes Incorporated DMP2123LQ-13

MPNDMP2123LQ-13
Active
$0.1145Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2123LQ-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3A (Ta)
Power dissipation1.4W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.25V @ 250µA
Rds on (Max) @ id, vgs72mOhm @ 3.5A, 4.5V
Gate charge (Qg) (Max) @ vgs7.3 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds443 pF @ 16 V