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Diodes Incorporated DMP2035UVTQ-13 — Discrete Semiconductors

Diodes Incorporated DMP2035UVTQ-13

MPNDMP2035UVTQ-13
Active
$0.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2035UVTQ-13 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C7.2A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
GradeAutomotive
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs23.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 10 V