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Diodes Incorporated DMP2035UTS-13 — Discrete Semiconductors

Diodes Incorporated DMP2035UTS-13

MPNDMP2035UTS-13
Active

MOSFET 2P-CH 20V 6.04A 8TSSOP

$0.6000Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2035UTS-13 specifications
ParameterValue
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.04A
Power - max890mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 P-Channel (Dual) Common Drain
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs35mOhm @ 4A, 4.5V
Gate charge (Qg) (Max) @ vgs15.4nC @ 4.5V
Input capacitance (Ciss) (Max) @ vds1610pF @ 10V