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Diodes Incorporated DMP2035UFDF-7 — Discrete Semiconductors

Diodes Incorporated DMP2035UFDF-7

MPNDMP2035UFDF-7
Active

MOSFET P-CH 20V 8.1A 6UDFN

$0.5200Ref. price · indicative, final on quote
Packaging6-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DMP2035UFDF-7 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C8.1A (Ta)
Power dissipation2.03W (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-UDFN Exposed Pad
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs29mOhm @ 6.4A, 4.5V
Gate charge (Qg) (Max) @ vgs20.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1808 pF @ 15 V